| MEMS传感器敏感单元RTD的力敏特性优化 |
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| 引用本文： | 郭浩,唐军,张斌珍,刘俊,薛慧,丁宇凯.MEMS传感器敏感单元RTD的力敏特性优化[J].传感技术学报,2012,25(10). |
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| 作者姓名： | 郭浩 唐军 张斌珍 刘俊 薛慧 丁宇凯 |
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| 作者单位： | 中北大学仪器科学与动态测试教育部重点实验室;中北大学电子测试技术国家重点实验室; |
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| 基金项目： | 中国博士后科学基金项目(2011M500544);重点实验室基金项目(9140C12041008,9140C120402110C1201);国家自然科学基金项目(61171056) |
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| 摘 要： | 首先通过减小垒前阱的厚度消除了负阻区的"台阶区",提高负阻区的阻值为-7.916Ω,并通过加压测试RTD(共振隧穿二极管)的力电耦合灵敏度,使其灵敏度由原来的5.5 mA/g增大到7 mA/g,优化了RTD作为MEMS传感器敏感单元的灵敏度,同时也通过增大RTD结构的台面积大小,有效的消除了负阻区的"台阶区",并使其负阻区的阻值增大为-0.06Ω,提高了MEMS传感器敏感单元RTD结构的灵敏度。
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| 关 键 词： | RTD 力电耦合 偏压灵敏度 台阶效应 |
Optimize the force-sensitive characteristics of RTD as the sensitive unit of MEMS sensors |
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| Abstract: | In this paper, we first eliminate "bench area" in the negative resistance area by reducing the thickness of the well to improve the resistance of the negative resistance for 7.916 . Then we conduct the force-electrical coupling test of RTD using the pressure test. As the result, we make its sensitivity increase from 5.5 mA/g to 7 mA/g, optimize the sensitivity of RTD as MEMS sensor sensitive unit. As well as, the "bench area" eliminates as increasing the size of launch region of RTD structure (RTS). At the same time, its negative resistance increases to 0.06 . Finally, we improve the sensitivity of RTD structure which is the unit of MEMS sensors. |
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| Keywords: | RTD Force-electrical coupling Bias voltage sensitivity Bench effect |
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