| （英）沉积参数对射频磁控溅射制备的碲锌镉薄膜的影响 |
| |
| 引用本文： | 曹鸿,褚君浩,王善力,邬云骅,张传军.（英）沉积参数对射频磁控溅射制备的碲锌镉薄膜的影响[J].红外与毫米波学报,2013,32(2):97-101. |
| |
| 作者姓名： | 曹鸿 褚君浩 王善力 邬云骅 张传军 |
| |
| 作者单位： | 1. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;上海太阳能电池研究与发展中心,上海201201
2. 上海太阳能电池研究与发展中心,上海,201201 |
| |
| 摘 要： | 采用Cd096Zn0.04Te靶,利用射频磁控溅射制备碲锌镉薄膜,通过改变基片温度、溅射功率和工作气压,制得不同的碲锌镉薄膜.将制备的碲锌镉薄膜放置在高纯空气气氛中,在473 K温度下退火.利用台阶仪、分光光度计、XRD和SEM测试设备表征,结果表明,通过退火和改变沉积参数,可以制备出禁带宽度在1.45～2.02eV之间调节的碲锌镉薄膜.
|
| 关 键 词： | 碲锌镉 薄膜 射频磁控溅射 带隙 |
| 收稿时间： | 2012/8/13 0:00:00 |
| 修稿时间： | 2012/12/10 0:00:00 |
Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering |
| |
| CAO Hong,CHU Jun-Hao,WANG Shan-Li,WU Yun-Hua and ZHANG Chuan-Jun.Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering[J].Journal of Infrared and Millimeter Waves,2013,32(2):97-101. |
| |
| Authors: | CAO Hong CHU Jun-Hao WANG Shan-Li WU Yun-Hua and ZHANG Chuan-Jun |
| |
| Affiliation: | National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,ShangHai Center for Photovoltaics,ShangHai Center for Photovoltaics,National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences |
| |
| Abstract: | Cd1-xZnx Te films were deposited by RF magnetron sputtering from Cd0.96 Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV. |
| |
| Keywords: | Cd1-xZnxTe thin films RF magnetron sputtering band gap |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
|
