InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al/sub 0.3/Ga/sub 0.7/As blocking barriers |
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Authors: | Shiang-Feng Tang Shih-Yen Lin Si-Chen Lee |
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Affiliation: | CSIST, Chung-li; |
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Abstract: | The ten stacked self-assembled InAs/GaAs quantum dot infrared photodetectors (QDIP) with different Al/sub 0.3/Ga/sub 0.7/As barrier widths and growth temperatures were prepared. Asymmetric current-voltage (I-V) characteristics and 2/spl sim/7.5 /spl mu/m detection window were observed. Peak responsivity of 84 mA/W at -0.4 V and peak specific detectivity of 2.5/spl times/10/sup 9/ cm-Hz/sup 1/2//W at zero bias were observed at 50 K. The characteristics of polarization insensitivity over the incident light and the high background photocurrent suggest that the self-assembled QDIP can be operated at higher temperature (/spl sim/250 K) under normal incidence condition in contrast to quantum well infrared photodetector (QWIP). |
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