(Ga,Mn)N : Sn Epilayers |
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Authors: | T Kondo H Owa and H Munekata |
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Affiliation: | (1) Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan |
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Abstract: | We have prepared (Ga,Mn)N : Sn epilayers on sapphire(0001) substrates by RF-plasma assisted molecular beam epitaxy. We found that codoping with Sn enhances the incorporation of Mn into a GaN host crystal. With increasing the Sn content, the offset ferromagnetic magnetization component tends to disappear and the epilayers become completely paramagnetic. The effective spin number is S 2.5 without Sn, whereas it decreases to S 2.0 when Sn is incorporated. n-type conduction starts to take place when Sn contents exceed beyond the Mn contents. |
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Keywords: | diluted magnetic semiconductor magnetic alloy semiconductor GaN RF-plasma assisted molecular beam epitaxy |
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