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Chasing the “Killer” Phonon Mode for the Rational Design of Low‐Disorder,High‐Mobility Molecular Semiconductors
Authors:Guillaume Schweicher  Gabriele D'Avino  Michael T Ruggiero  David J Harkin  Katharina Broch  Deepak Venkateshvaran  Guoming Liu  Audrey Richard  Christian Ruzi  Jeff Armstrong  Alan R Kennedy  Kenneth Shankland  Kazuo Takimiya  Yves H Geerts  J Axel Zeitler  Simone Fratini  Henning Sirringhaus
Affiliation:Guillaume Schweicher,Gabriele D'Avino,Michael T. Ruggiero,David J. Harkin,Katharina Broch,Deepak Venkateshvaran,Guoming Liu,Audrey Richard,Christian Ruzié,Jeff Armstrong,Alan R. Kennedy,Kenneth Shankland,Kazuo Takimiya,Yves H. Geerts,J. Axel Zeitler,Simone Fratini,Henning Sirringhaus
Abstract:Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron–phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high‐mobility molecular semiconductors, state‐of‐the‐art quantum mechanical simulations of the vibrational modes and the ensuing electron–phonon coupling constants are combined with experimental measurements of the low‐frequency vibrations using inelastic neutron scattering and terahertz time‐domain spectroscopy. In this way, the long‐axis sliding motion is identified as a “killer” phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high‐mobility molecular semiconductors is suggested.
Keywords:charge transport  dynamic disorder  field‐effect transistors  molecular design  organic electronics  transient localization scenario
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