| 对GaAs衬底表面进行氩离子清洗的研究 |
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| 引用本文： | 刘斌,方高瞻,张敬明,马骁宇,肖建伟. 对GaAs衬底表面进行氩离子清洗的研究[J]. 激光杂志, 2003, 24(1): 22-23 |
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| 作者姓名： | 刘斌 方高瞻 张敬明 马骁宇 肖建伟 |
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| 作者单位： | 中国科学院半导体研究所,国家光电子器件工程研究中心,北京,100083;中国科学院半导体研究所,国家光电子器件工程研究中心,北京,100083;中国科学院半导体研究所,国家光电子器件工程研究中心,北京,100083;中国科学院半导体研究所,国家光电子器件工程研究中心,北京,100083;中国科学院半导体研究所,国家光电子器件工程研究中心,北京,100083 |
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| 摘 要： | 介绍了离子清洗技术在提高980nm半导体激光器可靠性方面的应用。外延片在空气中解理后，半导体激光器的腔面会吸附上碳和氧等杂质。腔面吸附的氧和碳严重影响了器件的可靠性。本文用GaAs衬底表面模拟半导体激光器的解理腔面，并对其进行氩离子清洗，俄歇电子能谱（AES）分析显示氩离子清洗可以有效地清除GaAS表面的氧和碳等杂质。
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| 关 键 词： | 980nm半导体激光器 可靠性 离子清洗 AES |
| 修稿时间： | 2002-10-15 |
The investigation of Ar ion irradiation to the surface of GaAs substrate |
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| Liu Bin Fang Gaozhan Zhang Jingming Ma Xiaoyu Xiao Jianwei. The investigation of Ar ion irradiation to the surface of GaAs substrate[J]. Laser Journal, 2003, 24(1): 22-23 |
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| Authors: | Liu Bin Fang Gaozhan Zhang Jingming Ma Xiaoyu Xiao Jianwei |
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| Abstract: | The paper introduces the technology of ion irradiation for improving the reliability of 980nm semiconductor lasers.If the wafers are cleaved in air,the facets of laser diodes will be contaminated by impurity such as oxygen and carbon.The impurity on the facets of laser diodes will affect their reliability seriously.The surface of GaAs substrate is treated by Ar ion irradiation and measured by AES simulating the facets of laser diodes.By AES measurements,we know that Ar ion irradiation could eliminate the impurity of oxygen and carbon on surface of GaAs substrate effectively. |
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| Keywords: | nm semiconductor lasers reliability ion irradiation AES |
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