| 双晶x射线衍射法测量超薄层外延材料厚度 |
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| 引用本文： | 曲轶,高欣,张宝顺,薄报学,张兴德.双晶x射线衍射法测量超薄层外延材料厚度[J].半导体技术,1999,24(6):45-46,58. |
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| 作者姓名： | 曲轶 高欣 张宝顺 薄报学 张兴德 |
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| 作者单位： | 1. 吉林大学电子工程系,长春,130023
2. 长春光学精密机械学院高功率半导体激光国家重点实验室,长春,130022 |
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| 摘 要： | 介绍了通过双晶ｘ射线衍射测量超薄外延层厚度的一种方法。利用回摆曲线中的干涉条纹测量了通过ＭＢＥ生长的Ｇａ０．７Ａｌ０．３Ａｓ／Ｇａ０．９Ａｌ０．１Ａｓ／Ｇａ０．７Ａｌ０．３Ａｓ结构的各层层厚。
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| 关 键 词： | 双晶x射线衍射 超薄层厚度 |
Study of Thickness Measurement of Ultrathin Epitaxial Layer by X-Ray Double Crystal Diffraction |
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| Qu Yi,Gao Xin,Zhang Baoshun,Bo Baoxue,Zhang Xingde.Study of Thickness Measurement of Ultrathin Epitaxial Layer by X-Ray Double Crystal Diffraction[J].Semiconductor Technology,1999,24(6):45-46,58. |
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| Authors: | Qu Yi Gao Xin Zhang Baoshun Bo Baoxue Zhang Xingde |
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| Affiliation: | Qu Yi
(Jilin University Department of Electronics Engineering,Changchun 130023)
Gao Xin,Zhang Baoshun,Bo Baoxue,Zhang Xingde
(State Key Lab.on High Power Semiconductor Lasers,Changchun
Institute of Optics and Fine Mechanics,Changchun 130022) |
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| Abstract: | We introduce a method of measuring ultrathin epitaxital layer thickness.We have measured the thickness of Ga 0 7 Al 0 3 As/Ga 0 9 Al 0 1 As/Ga 0 7 Al 0 3 As structure by MBE with the interference fringes in rocking curve by x ray double crystal diffraction. |
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| Keywords: | X ray double crystal diffraction Ultrathin layer thickness |
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