Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films |
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| Authors: | Changgang Huang Meili Wang Zhonghua Deng Yongge Cao Quanlin Liu Zhi Huang Yuan Liu Wang Guo Qiufeng Huang |
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| Affiliation: | (1) School of Materials Science and Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, People’s Republic of China;(2) Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People’s Republic of China |
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| Abstract: | Indium-doped zinc oxide (IZO) films were fabricated by radio-frequency magnetron sputtering. The effects of hydrogen annealing on the structural, optical and electrical properties of the IZO films were investigated. The hydrogen annealing may deteriorate the crystallinity of the films. The surfaces of the films would be damaged when the annealing temperature was higher than 350 °C. After the annealing, the surface roughness of the films would decrease, and high transparency of 80–90% in the visible and near-infrared wavelength would be kept. Meanwhile, the resistivity decreased from 1.25 × 10−3 Ωcm of the deposited films to 6.70 × 10−4 Ωcm of the annealed films. The work function of the IZO films may be modulated between 4.6 and 4.98 eV by varying the hydrogen annealing temperature and duration. |
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