| 温度对太赫兹亚波长金属结构共振特性的影响 |
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| 引用本文： | 武阿妮,李晨毓,周庆莉,刘建丰,孙会娟,杨舟,张存林.温度对太赫兹亚波长金属结构共振特性的影响[J].红外与激光工程,2015,44(6):1832-1835. |
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| 作者姓名： | 武阿妮 李晨毓 周庆莉 刘建丰 孙会娟 杨舟 张存林 |
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| 作者单位： | 1.太赫兹光电子学教育部重点实验室,北京市太赫兹波谱与成像重点实验室,首都师范大学 物理系,北京 100048; |
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| 基金项目： | 国家自然科学基金(10804077)；北京市科技新星；北京市属高级青年拔尖人才培育计划 |
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| 摘 要： | 利用太赫兹时域光谱系统研究温度对GaAs基底上生长的太赫兹亚波长金属结构的透过率及共振特性的影响。实验发现,温度从低温80 K升高至380 K,样品的透过率逐渐降低,且低频共振频率处有轻微的红移现象。通过研究共振带区域及远离共振带区域的透过率情况,分析了总体透过率降低的根本原因在于温度升高导致GaAs基底的本征载流子浓度升高;共振凹陷减弱是由于基底载流子的变化致使透过率升高形成的;红移现象的产生是由于温度升高导致样品折射率增大。此外,该研究可以为太赫兹范围的功能器件在实际应用和生产制造中提供有意义的参考。
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| 关 键 词： | 太赫兹 温度 亚波长金属结构 |
| 收稿时间： | 2014-10-11 |
Influence of temperature on resonant properties in terahertz subwavelength metal structures |
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| Wu Ani,Li Chenyu,Zhou Qingli,Liu Jianfeng,Sun Huijuan,Yang Zhou,Zhang Cunlin.Influence of temperature on resonant properties in terahertz subwavelength metal structures[J].Infrared and Laser Engineering,2015,44(6):1832-1835. |
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| Authors: | Wu Ani Li Chenyu Zhou Qingli Liu Jianfeng Sun Huijuan Yang Zhou Zhang Cunlin |
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| Affiliation: | 1.Beijing Key Laboratory for Terahertz Spectroscopy and Imaging,Key Laboratory for Terahertz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing 100048,China;2.Department of Basic Course,Beijing Union University,Beijing 100101,China;3.School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China |
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| Abstract: | By using terahertz time domain spectroscopy(THz-TDS), the transmission and resonance properties of terahertz subwavelength metal structures at different temperatures were studied. The transmission of U- and E-shaped structures decreased gradually with temperature increasing from 80 K to 380 K. Meanwhile, the low resonance frequency showed a slight red-shift. Through the study of temperature-dependent transmission spectra at resonance and non-resonance regions, the phenomenon of transmission decreasing was attributed to the increasing of carrier concentration in GaAs substrate. The weakened resonant strength originated from the resonate quench by temperature-generated carriers in substrate. The red-shift was due to the increase of refractive index. The investigation could provide some meaningful guides in pratical application of terahertz functional devices. |
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| Keywords: | terahertz temperature subwavelength metal structure |
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