Improved inversion channel mobility for 4H-SiC MOSFETs followinghigh temperature anneals in nitric oxide |
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Authors: | Chung GY Tin CC Williams JR McDonald K Chanana RK Weller RA Pantelides ST Feldman LC Holland OW Das MK Palmour JW |
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Affiliation: | Dept. of Phys., Auburn Univ., AL; |
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Abstract: | Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2×1013 to 2×1012 eV-1 cm-2 following anneals in nitric oxide at 1175°C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/V-s following the passivation anneals |
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