Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer |
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Authors: | Tuncay Tunç ?emsettin Altindal ?brahim Uslu ?lbilge Dökme Habibe Uslu |
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Affiliation: | aScience Education Department, Faculty of Education, Aksaray University, Aksaray, Turkey;bPhysics Department, Faculty of Arts and Sciences, Gazi University, Ankara, Turkey;cChemistry Education Department, Faculty of Gazi Education, Gazi University, Ankara, Turkey;dScience Education Department, Faculty of Gazi Education, Gazi University, Ankara, Turkey |
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Abstract: | Current–voltage (I–V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80–400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (ΦB0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly dependent on temperature. The forward bias semi-logarithmic I–V curves for different temperatures have an almost common cross-point at a certain bias voltage. The values of ΦB0 increase with the increasing temperature whereas those of n decrease. Therefore, we have attempted to draw ΦB0 vs. q/2kT plot in order to obtain evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean value of BH and standard deviation (σ0) were found to be 0.974 eV and 0.101 V from this plot, respectively. Thus, the slope and intercept of modified vs. q/kT plot give the values of and Richardson constant (A?) as 0.966 eV and 118.75 A/cm2K2, respectively, without using the temperature coefficient of the BH. This value of A* 118.75 A/cm2K2 is very close to the theoretical value of 120 A/cm2K2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of Au/PVA/n-Si (1 1 1) SBDs can be successfully explained on the basis of the Thermionic Emission (TE) theory with a GD of the BHs at Au/n-Si interface. |
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Keywords: | I&ndash V&ndash T characteristics Barrier height Gaussian distribution Poly(vinyl alcohol) Schottky barrier diodes Electrospinning |
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