PbS/CoS–Pani composite semiconductor films

The synthesis and characterization of polyaniline (Pani) films embedded with PbS/CoS core–shell, having semiconductor characteristics are reported in this study. Mn²⁺ doped, PVA capped PbS/CoS core-shell particles dispersed in Pani matrix served as photoluminescent boosters. The absorption intensity of the core-shell particles–Pani hybrid increased significantly with wide spectrum response and hypsochromic effect. The Mott–Schottky plot showed a negative slope for PbS/CoS-Pani film, indicating typical p-type semiconductivity. The Tauc plot for PbS/CoS-Pani film revealed the direct transition type with a band gap of 2.36 eV. Solid state photovoltaic cells have been fabricated with PbS/CoS-Pani as the hole conductor. The cells show photocurrent of 0.93 mA/cm², voltage of 432 mV and energy conversion efficiency of 0.93%. The scanning electron micrograph revealed periodic arrangement in the polymer matrix. This arrangement of the core-shell particles in the continuous polymer matrix with high carrier density promises this material for the photoelectrochemical applications.