| 基于原位水汽生成工艺的栅氧化膜特性 |
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| 引用本文： | 孙凌,杨华岳.基于原位水汽生成工艺的栅氧化膜特性[J].半导体学报,2008,29(3):478-483. |
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| 作者姓名： | 孙凌 杨华岳 |
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| 作者单位： | [1]中国科学院上海微系统与信息技术研究所,上海200050 [2]上海宏力半导体制造有限公司,上海201203 [3]中国科学院研究生院,北京100049 |
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| 摘 要： | 介绍了一种制作栅介质的新工艺--原位水汽生成工艺.基于Deal-Grove模型提出了原位水汽生成过程中活性氧原子和硅一硅键反应形成硅氧硅键的氧化模型,并通过MOS电容结构对原位水汽生成和炉管湿法氧化所形成的栅氧化膜的电击穿特性进行了研究和分析.测试结果表明原位水汽生成的栅氧化膜相对于炉管湿法氧化有着更为突出的电学性能,这可以认为是由于弱硅一硅键的充分氧化所导致的.表明原位水汽生成在深亚微米集成电路器件制造中具有广阔应用前景.
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| 关 键 词： | 原位水汽生成 栅介质 击穿 ISSG gate dielectric breakdown |
| 文章编号： | 0253-4177(2008)03-0478-06 |
| 收稿时间： | 9/19/2007 5:26:04 PM |
| 修稿时间： | 2007年9月19日 |
Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation |
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| Sun Ling and Yang Steve.Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J].Chinese Journal of Semiconductors,2008,29(3):478-483. |
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| Authors: | Sun Ling and Yang Steve |
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| Affiliation: | Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China ;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Graduate University of the Chinese Academy of Sciences,Beijing 100049,Chin;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China |
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| Abstract: | A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported.Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process.The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation.The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing. |
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| Keywords: | ISSG gate dielectric breakdown |
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