Hydrogenation of polycrystalline silicon thin film transistors byplasma ion implantation

Both n- and p-channel polycrystalline silicon (poly-Si) thin film transistors (TFT's) have been hydrogenated using the plasma ion implantation (PII) technique. Significant improvements in device characteristics have been obtained. Because PII is capable of greater dose rates than plasma immersion, it allows for significantly shorter process times than other methods investigated thus far