| 非对称HALO结构的全耗尽SOI二维阈值电压解析模型 |
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| 引用本文： | 许剑, 丁磊, 韩郑生, 钟传杰,.非对称HALO结构的全耗尽SOI二维阈值电压解析模型[J].电子器件,2007,30(6):2166-2169. |
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| 作者姓名： | 许剑 丁磊 韩郑生 钟传杰 |
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| 作者单位： | 江南大学信息工程学院,江苏,无锡,214000;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 在考虑了隐埋层与硅层的二维效应的基础上提出非对称HALO结构的全耗尽SOI二维阈值电压解析模型,该模型计算了在不同硅膜厚度,掺杂浓度,HALO区占沟道比例的条件下的阈值电压.模型结果与二维数值模拟软件MEDICI的模拟结果较好的吻合,该模型对HALO结构的物理特性和工艺设计有很好的指导意义.
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| 关 键 词： | 阈值电压 表面势 全耗尽SOI HALO结构 |
| 文章编号： | 1005-9490(2007)06-2166-04 |
| 修稿时间： | 2007年5月31日 |
Analytical 2-D Threshold Voltage Model for Fully Depleted SOI MOSFET with Asymmetric HALO |
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| XU Jian,DING Lei,HAN Zheng-sheng,ZHONG Chuan-jie.Analytical 2-D Threshold Voltage Model for Fully Depleted SOI MOSFET with Asymmetric HALO[J].Journal of Electron Devices,2007,30(6):2166-2169. |
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| Authors: | XU Jian DING Lei HAN Zheng-sheng ZHONG Chuan-jie |
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| Abstract: | The paper proposed an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI)MOSFET with asymmetric HALO structure taking into consideration the two-dimensional effects in both SOI and buried-oxide layer. Based on the model, the threshold voltages are calculated as a function of SOI layer, doping density and HALO proportion, respectively. The predictions of the model are in good agreement with those of the two-dimension numerical simulator MEDICI. The results verify that the model offers guidance as to how the device designed. |
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| Keywords: | threshold voltage surface potential fully depleted SOI HALO structure |
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