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| 深亚微米三栅FinFET短沟道效应和拐角效应计算机模拟分析 | |
| 引用本文： | 王洪涛,王茺,李亮,胡伟达,周庆,杨宇.深亚微米三栅FinFET短沟道效应和拐角效应计算机模拟分析[J].功能材料,2009,40(5). |
| 作者姓名： | 王洪涛 王茺 李亮 胡伟达 周庆 杨宇 |
| 作者单位： | 1. 云南大学,工程技术研究院光电信息材料研究所,云南,昆明,650091;云南大学,物理科学技术学院,云南,昆明,650091 2. 云南大学,工程技术研究院光电信息材料研究所,云南,昆明,650091 3. 中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083 4. 云南大学,物理科学技术学院,云南,昆明,650091 |
| 基金项目： | 国家自然科学基金资助项目(60567001);;云南大学“中青年学术骨干培养基金”资助项目(w33010000) |
| 摘 要： | 利用三维器件模拟软件,研究了深亚微米三栅FinFET的短沟道效应,并模拟了阈值电压和亚阈值摆幅随硅鳍(fin)厚度和高度的变化情况.通过优化硅鳍厚度或高度,可以有效的控制短沟道效应.在进一步对深亚微米三栅FinFET的拐角效应进行二维数值模拟的过程中,并未观察到由拐角效应引起的泄漏电流.与传统的体硅CMOS结构有所不同,拐角效应并未使得深亚微米三栅FinFET性能变差,反而提高了其电学性能. |
| 关 键 词： | 三栅FinFET 短沟道效应 亚阈值摆幅 拐角效应 |
Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs |
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| WANG Hong-tao , WANG Chong , LI Liang , HU Wei-da , ZHOU Qing , YANG Yu.Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs[J].Journal of Functional Materials,2009,40(5). | |
| Authors: | WANG Hong-tao WANG Chong LI Liang HU Wei-da ZHOU Qing YANG Yu |
| Affiliation: | 1.Institute for Optoelectronic Information Materials;Research Institute of Engineering and Technology;Yunnan University;Kunming 650091;China;2.National Laboratory for Infrared Physics;Shanghai Institute of Technical Physics;Chinese Academy of Science;Shanghai 200083;3.School of Physical Science and Technology;China |
| Abstract: | Short-channel effects of deep sub-micron triple-gate FinFET were investigated by using 3-D device simulation software.The silicon fin's size dependence of threshold voltage and subthreshold swing were simulated and calculated.Short-channel effects could be effectively controlled by optimizing either silicon fin thickness or its height.The corner effects in deep sub-micron triple-gate FinFET were studied via 2-D numerical simulation.The calculated results showed that the corner effects didn't induce leakage ... |
| Keywords: | triple-FinFET short-channel effect subthreshold swing corner effect |
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