亚微米CMOS IC中自对准硅化物工艺的研究

自对准硅化钛工艺有许多重要的优点.但也存在栅氧化物的完整性、硅化物桥接短路、pn结损伤、二极管特性退化等问题.文章针对这些问题,在硅化前和硅化后的清洗、硅化的快速退火处理、接触电阻最佳化以及在硅化物上的接触孔腐蚀的选择性等方面进行了改进,有效地解决了问题.

An Investigation into Self-Aligned Ti-Silicide in Submicrometer CMOS Technology

The self aligned titanium silicide process has some very significant advantages However,it must be carefully integrated into the overall process flow to avoid potentially adverse effects The effects of the titanium silicide formation on the stress may cause gate oxide integrity problems The silicide bridging between the gate and s/d region can occur During the process,care must be taken not to consume the junctions or degrade the diode properties This paper introduces some analyses and considerations about cleaning before and after silicidation,RTA issues for silicidation,stress build up and relevance for device performance during the process,optimization of contact resistance,selectivity of contact hole etch on top of silicide,and so on