Effect of topological structure on photoluminescence of PbSe quantum dot‐doped borosilicate glasses |
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| Authors: | Zhousu Xu Xiaofeng Liu Chun Jiang Dewei Ma Jinjun Ren Cheng Cheng Jianrong Qiu |
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| Affiliation: | 1. Institute of Intelligent Optoelectronic Technology, Zhejiang University of Technology, Hangzhou, China;2. Zhejiang Provincial Collaborative Innovation Center of High‐end Laser Manufacturing Equipment, Hangzhou, China;3. School of Materials Science and Engineering, Zhejiang University, Hangzhou, China;4. State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai, China;5. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China;6. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China |
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| Abstract: | Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt‐quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiber‐drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070‐1330 nm) band with large full‐width at half‐maximum (FWHM) values (189‐266 nm) and notable Stokes shift (100‐210 nm) was observed, which depended on the B2O3 concentration. The PL lifetime was about 1.42‐2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO3] triangle units forming the two‐dimensional (2D) glass network structure clearly increased with increasing B2O3 concentration, which could accelerate the movement of Pb2+ and Se2? ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD‐doped borosilicate glass may find potential application in ultra‐wideband fiber amplifiers. |
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| Keywords: | crystallization glass topological structure optical properties PbSe quantum dots photoluminescence lifetime |
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