InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation |
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Authors: | Giuseppe Moschetti Niklas WadefalkPer-Åke Nilsson Yannick RoelensAlbert Noudeviwa Ludovic DesplanqueXavier Wallart Francois DannevilleGilles Dambrine Sylvain BollaertJan Grahn |
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Affiliation: | a Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg, Sweden b Institute of Electronics, Microelectronics and Nanotechnology, IEMN/CNRS UMR 8520, University of Lille, Av. Poincaré, 59652 Villeneuve d’Ascq, France |
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Abstract: | Properties of the InAs/AlSb high electron mobility transistor, essential for the design of a cryogenic low-noise amplifier (LNA) operating at low power dissipation, have been studied. Upon cooling from 300 K to 77 K, the dc transconductance gm was enhanced by 30% at a drain-source voltage VDS of 0.1 V. The gate current leakage showed a strong reduction of the Schottky current component at 77 K. Compared to 300 K, the cut-off frequency fT and maximum oscillation frequency fmax showed a significant improvement at 77 K with a peak fT (fmax) of 167 (142) GHz at VDS = 0.2 V. The suitability of the Sb HEMT for a cryogenic LNA design up to 50 GHz, operating at low dc power dissipation, was investigated through the extraction of the NFtot,min figure of merit. It was found that the best device performance in terms of noise and gain is achieved at a low VDS of 0.16 V resulting in a minimum NFtot,min of 0.6 dB for a frequency of 10 GHz when operating at 77 K. A benchmarking between the Sb HEMT and an InP HEMT has been conducted highlighting the device improvement in noise and gain required to reach today’s state-of-the-art cryogenic LNAs. |
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Keywords: | HEMT Antimonide InAs/AlSb Low power Low noise amplifier Cryogenic Microwave |
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