Charge transport mechanism in a typical Au/CdTe Schottky diode

The charge transport mechanism in a typical Au/CdTe Schottky diode has been investigated. Evidence for different types of charge transport at different temperature regions has been observed. The dominant transport mechanism in the 100–300 K region is identified as the Poole–Frenkel type. The activation energy of the trap level detected in the 100–300 K temperature range shows a voltage dependence. The transport mechanism changes at a characteristic temperature of about 270 K.