Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect |
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| Authors: | Y Weber |
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| Affiliation: | 1. Aalborg University, 9000 Aalborg, Denmark;2. ABB Corporate Research, Forskargränd 7, SE-721 78 Västerås, Sweden;1. University of Electronic Science and Technology of China, Chengdu, China;2. Institute of Electronic and Information Engineering in Guangzhou, University of Electronic Science and Technology of China, Dongguan, China;1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA;2. Power District, Alpha and Omega Semiconductor, Sunnyvale, CA 94085, USA |
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| Abstract: | This paper presents the impact of silicon crystalline defects generating mechanism of breakdown voltage degradation on low voltage vertical Power N-MOSFETs, functioning in avalanche mode. The physical defect determination is presented through a full failure analysis: it includes specific sample preparation, electrical characterization using EMMI techniques and physical characterizations using Scanning Electron Microscope, Transmission Electron Microscope and chemical delineation etches. Silicon crystal defects (edge dislocation and stacking fault) are found to be at the origin of the failure. Then, a discussion presents how the failure mechanism impacts the device structure and some possible root cause at the origin of the defect. |
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