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High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors
Authors:R Arinero  EX Zhang  N Rezzak  RD Schrimpf  DM Fleetwood  BK Choï  AB Hmelo  J Mekki  AD Touboul  F Saigné
Affiliation:1. Institut d’Electronique du Sud (IES), UMR CNRS 5214, Université Montpellier II, CC 083, Place E. Bataillon, 34095 Montpellier Cedex, France;2. Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235, USA;3. Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA;4. CERN, CH1211 Geneva 23, Switzerland;1. Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa;2. Department of Physics, Obafemi Awolowo University, Ile-Ife 220005, Nigeria;1. Institute for Experimental Physics, Hamburg University, Hamburg, Germany;2. National Institute of Materials Physics NIMP, Bucharest, Romania;1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;2. School of Science, Xi’an Polytechnic University, Xi’an 710048, China;3. Colloge of stomatology, Xi’an Jiaotong University, Xi’an 710004, China
Abstract:MOS capacitors with 7 nm SiO2 dielectrics and n-doped Si substrate were irradiated by 1.8 MeV protons with fluences ranging from 1012 to 5 × 1013 cm?2 which correspond to the typical LHC fluence range. No significant increase in gate oxide leakage current was detected. A decrease of the capacitance was observed in the accumulation regime. This effect is explained by an increase of the substrate resistivity caused by displacement damage.
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