On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies |
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| Authors: | Usama Zaghloul George Papaioannou Bharat Bhushan Fabio Coccetti Patrick Pons Robert Plana |
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| Affiliation: | 1. CNRS, LAAS, 7 avenue du colonel Roche, F-31077 Toulouse, France;2. Université de Toulouse, UPS, INSA, INP, ISAE, LAAS, F-31077 Toulouse, France;3. NLBB Laboratory, The Ohio State University, Columbus, OH 43210, USA;4. University of Athens, Solid State Physics, Panepistimiopolis, Zografos, Athens, Greece;1. School of Civil and Hydraulic Engineering, Hefei University of Technology, Hefei 230009, PR China;2. Anhui Economic and Management Institute, Hefei 230059, PR China;3. ERMESS, EPF-Ecole d’Ingénieurs, Sceaux 92330, France;4. Blaise Pascal Institute, Blaise Pascal University, Clermont Ferrand 63000, France;1. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, 8700, Leoben, Austria;2. Department of Materials Science, Chair of Materials Physics, Montanuniversität Leoben, 8700, Leoben, Austria;1. Primoceler Inc.,Kauhakorvenkatu 52, 33720 Tampere, Finland;2. Tampere University of Technology, Korkeakoulunkatu 6, 33720 Tampere, Finland |
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| Abstract: | This paper reviews the state of the art knowledge related to critical failure mechanisms in electrostatic micro- and nano-electromechanical systems (MEMS and NEMS) which are the dielectric charging and stiction. It describes also the recent employed nanoscale characterization techniques for these phenomena based on Kelvin probe force microscopy (KPFM) and force–distance curve measurements. The influence of relative humidity and dielectric deposition conditions on the charging/discharging processes is discussed. Moreover, different stiction mechanisms induced by electrostatic force and/or meniscus formation are analyzed. Finally, novel characterization methods are presented and used to correlate between the results from MEMS devices and metal–insulator–metal (MIM) capacitors. These methods are employed in view of application in electrostatic capacitive MEMS switches and could be easily extended to explore other NEMS/MEMS devices. The study provides an accurate understanding of the charging and stiction related failure mechanisms, presents guidelines for a proper packaging environment, and reveals precise explanations for the literature reported device level measurements of electrostatic MEMS devices. |
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