Positive bias temperature instabilities on sub-nanometer EOT FinFETs |
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| Authors: | PC Feijoo M Cho M Togo E San Andrés G Groeseneken |
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| Affiliation: | 1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;2. Dpto. Física Aplicada III, Fac. de CC. Físicas, Universidad Complutense, Av. Complutense S/N, 28040 Madrid, Spain;1. Hubei Key Lab. of Electrochemical Power Sources, College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China;2. Hubei Collaboration Innovation Center of Non-power Nuclear Technology, China;3. School of Nuclear Technology & Chemistry and Biology, Hubei University of Science and Technology, Xianning 437100, China;4. College of Chemistry, Central China Normal University, Wuhan 430079, China;1. Instituto de Ciencia y Tecnología de Polímeros (ICTP), Consejo Superior de Investigaciones Científicas (CSIC), C/Juan de la Cierva 3, 28006 Madrid, Spain;2. Freie Universität Berlin, Institute of Chemistry and Biochemistry, Takustr. 3, 14195 Berlin, Germany;3. Departamento de Química-Física Aplicada, Facultad de Ciencias, Universidad Autónoma de Madrid, C/Francisco Tomás y Valiente 7, Cantoblanco, 28049 Madrid, Spain;1. Centro de Física de Materiales (CSIC/UPV-EHU)—Materials Physics Center, Manuel Lardizabal 5, 20018 San Sebastián, Spain;2. Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland;3. Donostia International Physics Center (DIPC), Manuel Lardizabal 4, 20018 San Sebastián, Spain;4. Departamento Física Aplicada I, Universidad del País Vasco, 20018 San Sebastián, Spain;5. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands;6. Anorganisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 270, 69120 Heidelberg, Germany;7. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen, Switzerland;8. Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, E-50009 Zaragoza, Spain;9. Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza, Spain;1. Department of Industrial Engineering, University of Catania, viale A. Doria 6, 95125 Catania, Italy;2. Department of Mathematics and Computer Science, University of Catania, viale A. Doria 6, 95125 Catania, Italy;1. College of Science, Shanghai University, Shanghai 200444, PR China;2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science, Suzhou 215123, PR China;3. Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, PR China |
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| Abstract: | PBTI degradation on FinFETs with HfO2/TiN gate stack (EOT < 1 nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defects in the top-wall high-κ oxide than in the sidewall of the fin. This could explain more severe PBTI degradation. |
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