Thermal optimization of GaN-on-Si HEMTs with plastic package |
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| Authors: | R Liu D Schreurs W De Raedt F Vanaverbeke R Mertens I De Wolf |
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| Affiliation: | 1. Department of Electrical Engineering, K.U. Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium;2. imec vzw, Kapeldreef 75, 3001 Leuven, Belgium;3. Department of Metallurgy and Materials Engineering, K.U. Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium;3. Department of Microbiology, Faculty of Pharmaceutical Sciences, Tokushima Bunri University, Yamashiro-cho, Tokushima 770-8514, Japan;4. Department of Biochemistry 2, Nagoya University School of Medicine, 65 Tsurumai, Showa-ku, Nagoya 466, Japan |
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| Abstract: | In this paper, the degradation of a GaN-on-Si based RF power amplifier is investigated by means of electrical characterization. The reliability issues identified during this work are clearly related to the high thermal resistance between the device and the heat sink, which causes gate-leakage current and output power degradation. Moreover, we have demonstrated a low cost thermal optimization approach by increasing the thermal dissipation area and reducing the device carrier thickness. Measurement results show that the saturated output power can be increased from 1 W up to 5 W without device degradation at 3.8 GHz. |
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