| 掩模材料与新颖的衬底方案关键问题及新的良机(英文) |
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| 作者姓名： | Ute Buttgereit Holger Seitz Guenter Hesse Patrick M. Martin |
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| 作者单位： | Schott Lithotec AG Germany，Schott Lithotec AG，Germany，Schott Lithotec AG，Germany，Photronics，Inc.，USA |
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| 摘 要： | 通过对掩模衬底材料和掩模加工工艺利用硬性分界条件可满足45nm及以下技术节点的掩模要求。此外类似于折射指数、平整度、成分、均匀性和应力等衬底材料的固有特性严重地影响到掩模加工性能和光刻性能。评述了45nm及以下技术节点对空白材料,掩模及晶片层面的要求。指出了对于关键问题及出现的问题的可仿效实施的方法,最后研究了集成用于高效光掩模工厂的掩模材料的实际情况分析。
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| 关 键 词： | 极紫外光刻 45nm技术节点 光掩模 掩模材料 掩模制作 |
| 文章编号： | 1004-4507(2006)04-0023-08 |
Mask Materials and Novel Blanks -Solutions, Critical Issues and New Opportunities |
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| Ute Buttgereit Holger Seitz Guenter Hesse Patrick M. Martin.Mask Materials and Novel Blanks -Solutions, Critical Issues and New Opportunities[J].Equipment for Electronic Products Marufacturing,2006,35(4):23-30. |
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| Authors: | Ute Buttgereit Holger Seitz Guenter Hess Patrick M Martin |
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| Affiliation: | 1. Schott Lithotelc AG, Germany
2. Photronics, Inc.,USA |
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| Abstract: | Meeting the mask requirements for 45 nm node and beyond impose tough boundary conditions on the mask blank materials and mask process. Moreover, the intrinsic properties of the blank materials like refractive index, flatness, composition, uniformity and stress influence significantly mask process performance and lithographic performance. Our paper will review the requirements for the technology nodes on the blank, mask and wafer level. It addresses exemplarily viable solutions for critical problems as well as open issues. Analysis of the mask materials for integration into a commercial photomask facility will be explored for practical cases. |
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| Keywords: | EUVL 45 nm node technology Lithography Photomask Mask materials Mask process |
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