Diamond surface-channel FET structure with 200 V breakdown voltage |
| |
| Authors: | Gluche P. Aleksov A. Vescan A. Ebert W. Kohn E. |
| |
| Affiliation: | Dept. of Electron. Devices & Circuits, Ulm Univ.; |
| |
| Abstract: | An enhancement mode diamond FET using a hydrogen-terminated surface as hole conductive channel has been fabricated with 200 V gate to drain breakdown voltage. At the 8.5-μm gate length the maximum drain current was 22 mA/mm. 90 mA/mm maximum drain current was obtained at a gate length of 3.0 μm. Scaling to below 1 μm gate length assuming undegraded breakdown conditions will result in a projected RF power handling capability above 6 W/mm |
| |
| Keywords: | |
|
