| 具有无机有机双绝缘层和修饰电极的薄膜晶体管 |
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| 引用本文： | 白钰,刘向,陈玲,朱文清,蒋雪茵,张志林.具有无机有机双绝缘层和修饰电极的薄膜晶体管[J].光电子．激光,2008,19(7). |
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| 作者姓名： | 白钰 刘向 陈玲 朱文清 蒋雪茵 张志林 |
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| 作者单位： | 1. 上海大学材料学院,上海,嘉定,201800
2. 上海大学材料学院,上海,嘉定,201800;上海大学新型显示教育部重点实验室,上海,200072 |
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| 基金项目： | 国家自然科学基金资助项目
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国家"973"计划资助项目 |
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| 摘 要： | 研究了有机薄膜晶体管器件.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.实验表明采用一种硅烷耦合剂-十八烷基三氯硅烷(OTS)修饰SiO2可以有效地降低栅绝缘层的表面能从而明显提高了器件的性能.器件的场效应迁移率提高了2.5倍、阈值电压降低了3 V、开关电流比从103增加到104.同时我们采用MoO3修饰铝作为器件的源漏电极,形成MoO3/Al双层电极结构.实验表明在同样的栅极电压下,具有MoO3/Al 电极的器件和金电极的器件有着相似的源漏输出电流Ids.结果显示具有OTS/SiO2双绝缘层的及MoO3/Al 电极结构的器件能有效改进有机薄膜晶体管的性能.
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| 关 键 词： | 有机薄膜晶体管 双绝缘层 双层电极 迁移率 |
Thin film transistors with inorganic-organic double layer gate insulators and modificative electrodes |
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| BAI Yu,LIU Xiang,CHEN Ling,ZHU Wen-qing,JIANG Xue-yin,ZHANG Zhi-lin.Thin film transistors with inorganic-organic double layer gate insulators and modificative electrodes[J].Journal of Optoelectronics·laser,2008,19(7). |
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| Authors: | BAI Yu LIU Xiang CHEN Ling ZHU Wen-qing JIANG Xue-yin ZHANG Zhi-lin |
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| Affiliation: | BAI Yu1,LIU Xiang1,CHEN Ling1,ZHU Wen-qing1,2,JIANG Xue-yin1,ZHANG Zhi-lin1,2(1.Department of Materials Science,Shanghai University,Jiading Campus,Shanghai 201800,China,2.Key Laboratory of Advanced Display , System Application,Ministry of Education,Shanghai 200072,China) |
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| Abstract: | An organic thin-film transistor(OTFT) device is investigated.Thermal grown SiO2 layer is used as the OTFT gate dielectric;Copper phthalocyanine(CuPc) is used as an active layer.It is found that using silane coupling agents-octadecyltrichlorosilane(OTS) can reduce the surface energy of the SiO2 gate dielectric and significantly improve device performance.This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility by 2.5 times,reduces the threshold voltage by 3 V,and improves the on... |
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| Keywords: | organic thin film transistor double layer electrode double layer insulator mobility |
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