| HEMT DCFL倒相器的模拟分析 |
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| 引用本文： | 吴英,陈效建.HEMT DCFL倒相器的模拟分析[J].固体电子学研究与进展,1990,10(2):137-144. |
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| 作者姓名： | 吴英 陈效建 |
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| 作者单位： | 南京电子器件研究所
(吴英，陈效建)，南京电子器件研究所(林金庭) |
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| 摘 要： | 本文对HEMT DCFL倒相器直流传输特性及瞬态特性进行了模拟分析.在HEMT单管特性分析中,利用了K.Park的I-V特性分析模型,通过对E/D倒相器的驱动管与负载管工作区域的划分,讨论了电压传输过程中三个不同的工作区;模拟瞬态特性时,分别考虑了电流充放电过程中驱动管和负载管的不同工作状态,较为正确地算出了延迟时间;模拟结果与实验及理论分析吻合.
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| 关 键 词： | HEMT DCFL 倒相器 模拟分析 |
Simulation Analysis of HEMT DCFL Inverter |
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| Abstract: | A model for simulating the d.c. transfer characteristic and transient behaviour of the HEMT DCFL inverter has been proposed. In this model the formulas of the drived- and loaded-HEMT at various operating conditione are drived from K. Park's HEMT I-V characteristic analysis, and three different operating regimes of the inverter in voltage- transfer process are discussed in detail. For inverter transient characteristic simulation, the model deals with the different operation status of the drived-and loaded-devices under both charging and discharging conditions to calculate the gate delay time. The simulated results are in well agreement with the theoretical analysis. |
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