11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.s |
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| Authors: | Takayama Yoichiro Ogawa Tadayuki Aona Yoichi |
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| Affiliation: | Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan; |
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| Abstract: | Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain. |
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