Effect of bias voltage on microstructure and nanomechanical properties of Ti films |
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| Authors: | Ying-long LIU Fang LIU Qian WU Ai-ying CHEN Xiang LI Deng PAN |
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| Affiliation: | 1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China |
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| Abstract: | In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). It is interesting to find that the microstructure of pure Ti films was characterized by the composite structure of amorphous-like matrix embodied with nanocrystallines, and the crystallization was improved with the increase of bias voltage. The hardness of Ti films measured by nanoindentation tests shows a linear relationship with grain sizes in the scale of 6-15 nm. However, the pure Ti films exhibit a soft tendency characterized by a smaller slope of Hall-Petch relationship. In addition, the effect of bias voltage on the growth orientation of Ti films was discussed. |
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| Keywords: | Ti film magnetron sputtering bias voltage nanocrystalline Hall-Petch relationship |
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