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椭圆缺陷轮廓的成品率估计
引用本文:王俊平,郝跃,张卓奎,任春丽,李康,方建平. 椭圆缺陷轮廓的成品率估计[J]. 西安电子科技大学学报(自然科学版), 2006, 33(3): 433-437
作者姓名:王俊平  郝跃  张卓奎  任春丽  李康  方建平
作者单位:[1]西安电子科技大学宽禁带芈导体材料与器件教育部重点实验室,陕西西安710071 [2]西安电子科技大学通信工程学院,陕西西安710071 [3]西安电子科技大学理学院,陕西西安710071
基金项目:国家高技术研究发展计划(863计划)
摘    要:现有成品率及关键面积估计模型中。假定缺陷轮廓为圆。而70%的实际缺陷轮廓接近于椭圆.提出了椭圆缺陷轮廓的成品率模型,该模型与圆模型相比更具有一般性.而圆模型轮廓的成品率模型仅为新模型的特例.比较了新模型与真实缺陷及其圆模型引起的成品率损失。表明新模型在成品率估计方面更加精确.

关 键 词:真实缺陷  椭圆缺陷模型  关键面积  成品率模型
文章编号:1001-2400(2006)03-0433-05
收稿时间:2005-08-31
修稿时间:2005-08-31

Estimation of yield associated with elliptical defect
WANG Jun-ping,HAO Yue,ZHANG Zhuo-kui,Ren Chun-li,LI Kang,FANG Jian-ping. Estimation of yield associated with elliptical defect[J]. Journal of Xidian University, 2006, 33(3): 433-437
Authors:WANG Jun-ping  HAO Yue  ZHANG Zhuo-kui  Ren Chun-li  LI Kang  FANG Jian-ping
Affiliation:(1) Ministry of Edu. Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi′an 710071, China;(2) School of Telecommunication Engineering, Xidian Univ., Xi′an 710071, China;(3) School of Science, Xidian Univ., Xi′an 710071, China
Abstract:In integrated circuits, the defects associated with photolithography are assumed to be the shape of circular discs in order to perform the estimation of yield and fault analysis. However, the shape of 70% real defects approximates elliptical shapes. This paper provides a yield model caused by elliptical defects. The model is more general than that of the circular defect as the model is only an instance of the new model. A comparison result between the two models in experiment shows that the new model may predict the yield caused by real defects more accurately than the circular model does, which is of significance for the prediction and improvement of the yield.
Keywords:real defect  elliptical defect model    critical area  yield modeling
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