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InGaAs/InP APD探测器光电特性检测
引用本文:肖雪芳,杨国华,归强,王国宏,马晓宇,陈朝,陈良惠. InGaAs/InP APD探测器光电特性检测[J]. 电子科技大学学报(自然科学版), 2008, 37(3): 460-463
作者姓名:肖雪芳  杨国华  归强  王国宏  马晓宇  陈朝  陈良惠
作者单位:1.中国科学院半导体研究所 北京 海淀区 100083;
摘    要:建立了雪崩二极管的静态光电特性的自动测试系统。利用该系统对光敏面的直径为500 μm的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试。测试结果表明,该APD器件在90%击穿电压下的暗电流为151 nA,在直径500 μm的光敏面上其光响应均匀性良好。提出一种测量雪崩二极管倍增因子的方法,只需利用普通的测量电流-电压的测试仪器,就可以获得开始倍增时的光电流,从而得到APD的倍增因子。通过该方法得到的InGaAs/InP APD器件最大倍增因子的典型值在10~100量级。

关 键 词:静态光电特性的自动测试系统   雪崩光电二极管   大面积APD   倍增因子
收稿时间:2006-10-24
修稿时间:2006-10-24

Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode
XIAO Xue-fang,YANG Guo-hua,GUI qiang,WANG Guo-hong,MA Xiao-yu,CHEN Chao,CHEN Liang-hui. Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(3): 460-463
Authors:XIAO Xue-fang  YANG Guo-hua  GUI qiang  WANG Guo-hong  MA Xiao-yu  CHEN Chao  CHEN Liang-hui
Affiliation:1.Institute of Semiconductor of Chinese Academy of Science Haidian Beijing 100083;2.Department of Physics of Xiamen University Xiamen 361005
Abstract:A measurement system is set up which could measure static optoelectronic characteristics of avalanche photodiodes (APDs). By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark current (~150 nA at 90% of breakdown) and a uniform photoresponse profile of about 500 μm diameter. A method of getting APDs's multiplication gain is also proposed. Through getting the photocurrent at the point where multiplication is beginning, the multiplication gain can be obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10~100.
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