Metal-insulator-semiconductor structures of InSb/SiO2with very low interface trap density

MIS structures fabricated using InSb and silicon dioxide with an interface trap density as low as 4×10¹⁰ cm^-2 eV^-1 have been achieved. This is about one order of magnitude less than any other reported figure for the InSb MIS system. Both capacitance/voltage and conductance techniques have been employed to study the interface properties of InSb/SiO₂. A low state density of <10¹⁰ cm^-2 was observed and the dielectric breakdown field of the oxide was greater than 4 mV cm^-1