首页 | 本学科首页   官方微博 | 高级检索  
     

适用于间接矩阵变换器的IGBT驱动保护电路设计
引用本文:梅杨,常娜卿,李正熙.适用于间接矩阵变换器的IGBT驱动保护电路设计[J].电气传动,2011,41(1):60-64.
作者姓名:梅杨  常娜卿  李正熙
作者单位:北方工业大学电力电子与电气传动工程中心;
基金项目:国家自然科学基金资助项目(50907002); 北京市教育委员会科技发展计划面上项目(KM201010009006)
摘    要:针对间接矩阵变换器中开关器件多,电路拓扑复杂的特点,设计了一种适用于间接矩阵变换器的绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的驱动保护电路.该电路基于M57962厚膜电路,并设有隔离电源和阈值电压调节电路,可以有效实现矩阵式变换器各个开关器件的隔离供电,以及对各开...

关 键 词:间接矩阵变换器  绝缘栅双极型晶体管  M57962  驱动保护电路

Design of IGBT Driving and Protection Circuit for Indirect Matrix Converter
MEI Yang,CHANG Na-qing,LI Zheng-xi.Design of IGBT Driving and Protection Circuit for Indirect Matrix Converter[J].Electric Drive,2011,41(1):60-64.
Authors:MEI Yang  CHANG Na-qing  LI Zheng-xi
Affiliation:MEI Yang,CHANG Na-qing,LI Zheng-xi (Power Electronics and Motor Driving Engineering Center,North China University of Technology,Beijing 100144,China)
Abstract:A driving and protection circuit for insulated gate bipolar transistor(IGBT) was designed.This circuit is applied in the indirect matrix converter,which has much more complex topology and higher number of switching devices than conventional PWM converters.The circuit is based on M57962 hybrid integrated circuit with isolated power and threshold voltage regulator circuit,which is able to supply the isolated power for each switch device in the matrix converter and regulate the over-current protection threshol...
Keywords:indirect matrix converter  insulated gate bipolar transistor  M57962  drive and protection circuit  
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号