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Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface |
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| Authors: | Okamura M Kobayashi T |
| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
| Abstract: | Inversion-mode InP MISFETs with a thermally oxidised InP/InP interface have been fabricated. The devices exhibit fairly stabilised drain-current/time characteristics compared with those of the conventional devices reported so far. The MIS interface properties are also discussed. |
| Keywords: | |