| 用混合源法生长突变浓度分布的硅外延层 |
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| 引用本文： | 田光炎.用混合源法生长突变浓度分布的硅外延层[J].固体电子学研究与进展,1986(2). |
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| 作者姓名： | 田光炎 |
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| 作者单位： | 南京固体器件研究所 |
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| 摘 要： | 业已用一定比例的SiH_4/SiCl_4混合源,生长了突变浓度分布的N/N~+和P/N/N~+层.发现混合源生长外延层的N~+-N过渡区宽度以及N-P之间的补偿区宽度均窄于用SiH_4或SiCl_4单一源生长的情况.
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Silicon Epilayer with an Abrupt Profile Grown by a Mixed Source |
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| Abstract: | The abrupt profile of N/N+ and/or P/N/N+ has been grown by a mixed source. It has been found that the N+/N transition region or N+/P compensation region of the epilayer grown by the mixed source is narrower than that by the single source (SiH4 or SiCl4). |
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