Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon |
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| Authors: | O. V. Aleksandrov N. N. Afonin |
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| Affiliation: | (1) Svetlana-Poluprovodniki, a Closed Joint-Stock Company, 191156 St. Petersburg, Russia;(2) Voronezh State Pedagogical University, 394043 Voronezh, Russia |
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| Abstract: | A model of diffusion-segregation impurity redistribution in the system SiO2-Si during the thermal oxidation of silicon is developed, taking into account the nonequilibrium character of the segregation process at the moving phase boundary. The temperature dependence of the mass transfer of phosphorus and its mass-transfer coefficient at the SiO2-Si interface are determined by the numerical analysis of experimental data. Fiz. Tekh. Poluprovodn. 32, 19–23 (January 1998) |
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