GaInAsP/InP laser with monolithically integrated monitoring detector |
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| Authors: | Iga K Miller BI |
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| Affiliation: | Bell Laboratories, Holmdel, USA; |
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| Abstract: | Monolithic fabrication of a GaInAsP/InP laser with an etched mirror and monitoring detector is reported. Stripegeometry lasers operating at wavelengths of ~1.3 ?m with threshold current of only 300 mA have been obtained. The monitoring detector on the same InP substrate was confirmed to operate with high sensitivity, comparable with that of an external Ge photodiode. |
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