基于MEMS工艺的SOI高温压力传感器设计

利用MEMS(微机电系统)工艺中的扩散,刻蚀,氧化,金属溅射等工艺制备出SOI高温压力敏感芯片,并通过静电键合工艺在SOI芯片背面和玻璃间形成真空参考腔,最后通过引线键合工艺完成敏感芯片与外部设备的电气连接.对封装的敏感芯片进行高温下的加压测试,高温压力测试结果表明,在21℃(常温)至300℃的温度范围内,传感器敏感芯片可在压力量程内正常工作,传感器敏感芯片的线性度从0.9 985下降为0.9 865,控制在较小的范围内.高温压力下的性能测试结果表明,该压力传感器可用于300℃恶劣环境下的压力测量,其高温下的稳定性能为压阻式高温压力芯片的研制提供了参考.

Design of SOI High Temperature Pressure Sensor Based on MEMS Process

By using the process of diffusion,etching,oxidation,sputtering in MEMS(micro electro mechanical sys-tem)process,the SOI high temperature pressure sensor chip is prepared,and the vacuum chamber is formed be-tween the back of sensor chip with the glass through the electrostatic bonding process,finally the sensor chip and the peripheral equipment is connected through the wire bonding process. Test the packaged sensor chip under high temperature with high pressure,the test results shows that in the temperature range 21℃(at room temperature)to 300℃,the sensor chip can work normally in the pressure scale,the linearity of the sensor chip is decreased from 0.9 985 to 0.9 865,controlled in a small range. The performance test results under high temperature pressure shows that the pressure sensor can be used for pressure measurement in 300℃harsh environment,the stable performance under high temperature has provided reference for the development of piezoresistive pressure chip.