1.55 ?m InGaAsP low-threshold buried-crescent injection laser

Fabrication of 1.55 ?m InGaAsP buried-crescent (BC) injection lasers with a p-n-p-n blocking structure is described. The BC lasers exhibit a threshold current as low as 14 mA at 25°C, very high yield, output power more than 10 mW and high-temperature operation up to 80°C. These BC lasers have continued to operate in stable CW mode at 50°C for more than 1000 h. The lifetime of the 1.55 ?m InGaAsP lasers at 50°C is estimated to exceed about 2.5 × 104 h.