Magnetic Properties of Mn‐doped SnO2 Thin Films Prepared by the Sol–Gel Dip Coating Method for Dilute Magnetic Semiconductors

Manganese‐doped tin oxide (SnO₂:Mn) thin films were deposited on glass substrates by the sol–gel dip coating technique. The effect on structural, morphological, magnetic, electrical, and optical properties in the films with different Mn concentrations (0–5 mol%) were investigated. X‐ray diffraction patterns (XRD) showed the deterioration of crystallinity with increase in Mn‐doping concentration. Scanning electron microscopy (SEM) studies showed an inhibition of grain growth with an increase in Mn concentration. X ray photoelectron spectroscopy (XPS) revealed the presence of Sn⁴⁺ and Mn³⁺ in SnO₂: Mn films. SnO₂: Mn films show ferromagnetic and paramagnetic behavior. These SnO₂:Mn films acquire n‐type conductivity for 0–3 mol% (SnO₂ ‐ Sn_0.97Mn_0.03O_{2) ‐}doping concentration and p type for 5 mol% Mn‐doping concentration(Sn_0.95Mn_0.05O₂) in SnO₂ films. An average transmittance of > 75% (in UV‐Vis region) was observed for all the SnO₂:Mn films. Optical band gap energy of SnO₂: Mn films were found to vary in the range 3.55 to 3.71 eV with the increase in Mn‐doping concentration. Photoluminescence (PL) spectra of the films exhibited an increase in the emission intensity with increase in Mn‐doping concentration which may be due to structural defects or luminescent centers, such as nanocrystals and defects in the SnO₂. Such SnO₂:Mn films with structural, magnetic and optical properties can be used as dilute magnetic semiconductors.