The Effect of PbS on Crystallization Behavior of GeS2‐Ga2S3‐Based Chalcogenide Glasses |
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| Authors: | Guoshun Qu Sumin Zhai Yinsheng Xu Shixun Dai Haizheng Tao Shaoxuan Gu Changgui Lin |
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| Affiliation: | 1. Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, , Ningbo, Zhejiang, 315211 China;2. State Key Laboratory of Silicate Materials for Architecture, Wuhan University of Technology, , Wuhan, Hubei, 430070 China |
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| Abstract: | Glass‐ceramics of PbS‐doped 80GeS2·20Ga2S3 were fabricated by heat treatments of base glasses at Tg+30°C for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X‐ray diffraction and Raman results indicated that Ga2S3 and GeS2 crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS2·20Ga2S3 glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system. |
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