Scalable small-signal model for BJT self-heating |
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| Authors: | Fox RM Lee S-G |
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| Affiliation: | Dept. of Electr. Eng., Florida Univ., Gainesville, FL; |
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| Abstract: | The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y22 and Y12. A frequency-domain solution to the heat-flow equation is presented. It applies to any rectangular emitter geometry. This model, although simple enough for CAD, predicts thermal spreading impedance with good accuracy for a wide range of frequencies |
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