| 高效率976nm激光器材料 |
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| 引用本文： | 田秀伟,陈宏泰,车相辉,林琳,王晶,张世祖,徐会武,刘会民,王晓燕,杨红伟,安振峰.高效率976nm激光器材料[J].微纳电子技术,2010,47(1). |
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| 作者姓名： | 田秀伟 陈宏泰 车相辉 林琳 王晶 张世祖 徐会武 刘会民 王晓燕 杨红伟 安振峰 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 使用自洽二维数字模拟软件优化半导体激光器的外延结构,对GaInAs/AlGaAs分别限制压应变单量子阱结构进行了模拟,研究了包层和波导层的Al组分对工作电压的影响。根据模拟结果,采用金属有机化学淀积(MOCVD)技术,外延生长了单量子阱976nm激光器材料。利用该材料制作成2mm腔长的连续(CW)单管器件,采用C-mount载体标准封装,并进行了测试。测试结果表明,模拟与实验的结论一致,降低优化包层和波导层的Al组分可以减小工作电压,从而提高了976nm半导体激光器的转换效率。室温下,当工作电流为500A/cm2时,包层和波导层Al组分分别为0.35和0.15时,激光器的工作电压降低为1.63V,使得电光转换效率达到67%。
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| 关 键 词： | 金属有机化学淀积 压应变 转换效率 自洽二维数字模拟 工作电压 Al组分 |
976 nm High-Efficiency Semiconductor Laser Material |
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| Tian Xiuwei,Chen Hongtai,Che Xianghui,Lin Lin,Wang Jing,Zhang Shizu,Xu Huiwu,Liu Huimin,Wang Xiaoyan,Yang Hongwei,An Zhenfeng.976 nm High-Efficiency Semiconductor Laser Material[J].Micronanoelectronic Technology,2010,47(1). |
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| Authors: | Tian Xiuwei Chen Hongtai Che Xianghui Lin Lin Wang Jing Zhang Shizu Xu Huiwu Liu Huimin Wang Xiaoyan Yang Hongwei An Zhenfeng |
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| Affiliation: | The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | The epitaxial structure of semiconductor lasers was optimized by the self-consistent two-dimension digital simulation software.The GaInAs/AlGaAs separate confinement compressive strain single quantum well structure was simulated,and the effects of the Al compositions in the cladding and waveguide layers on the operating voltage were studied.According to simulation results,the single quantum well material of 976 nm lasers was grown by the metal organic che-mical vapor deposition(MOCVD).The CW single device w... |
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| Keywords: | metal organic chemical vapor deposition(MOCVD) compressive strain conversion efficiency self-consistent two-dimension digital simulation operating voltage Al composition |
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