High deposition rate of amorphous silicon thick layers using a gas mixture of 10% silane in hydrogen |
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Authors: | S Soto M Estrada A Merkulov R Asomoza |
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Affiliation: | Sección de Electrónica del Estado Sólido, Depto. de Ingeniería Eléctrica Centro de Investigación y Estudios Avanzados del IPN, Apdo. Postal 14-740 CP, 07000 Mexico D.F., Mexico |
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Abstract: | The deposition rate of amorphous silicon of the order of 0.9 μm/h, has been obtained using a gas mixture of 10% silane (SiH4) in hydrogen (H2), with a RF source of 13.56 MHz. Best films were deposited at a total flow rate of 100–200 sccm, 300°C substrate temperature, 66.7 Pa, and RF power density of 150 mW/cm2. The geometrical configuration of the reaction chamber included a gas injector that was specially designed for this purpose. Films were characterized by Fourier transform infrared (FTIR), secondary ion mass spectrometry (SIMS), and profilometer. In addition, thick p-i-n diodes were prepared and characterized, obtaining reverse current densities lower than 5×10?6 A/cm2 at full depletion. |
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Keywords: | Amorphous films Amorphous silicon Silanes Hydrogen Fourier transform infrared spectroscopy Secondary ion mass spectrometry Deposition Plasma applications Semiconductor diodes Current density Plasma deposition Profilometers |
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