| ULSI制造中铜化学机械抛光的腐蚀磨损机理分析 |
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| 引用本文： | 李秀娟,金洙吉,康仁科,郭东明,苏建修.ULSI制造中铜化学机械抛光的腐蚀磨损机理分析[J].润滑与密封,2005(4):77-80. |
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| 作者姓名： | 李秀娟 金洙吉 康仁科 郭东明 苏建修 |
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| 作者单位： | 大连理工大学精密与特种加工教育部重点实验室,辽宁,大连,116024 |
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| 基金项目： | 国家自然科学基金重大项目资助(50390061). |
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| 摘 要： | 以超大规模集成电路(ULSI)芯片多层互连结构制造中的关键平坦化工艺——铜化学机械抛光(Cu—CMP)为研究对象，针对Cu—CMP中存在的抛光液的化学腐蚀作用和磨料的机械磨损现象，采用腐蚀磨损理论分析了Cu—CMP材料去除机理。提出铜CMP的材料去除中存在着机械增强的化学腐蚀和化学增强的机械磨损，并分析了Cu—CMP的静态腐蚀材料去除、机械增强的腐蚀去除与化学增强的机械去除机理。
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| 关 键 词： | ULSI 铜化学机械抛光 材料去除机理 腐蚀磨损 |
| 文章编号： | 0254-0150(2005)4-077-4 |
| 修稿时间： | 2004年9月1日 |
Corrosive Wear Analysis of the Copper Chemical-mechanical Polishing in ULSI Manufacturing |
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| Li Xiujuan,Jin Zhuji,Kang Renke,Guo Dongming,Su Jianxiu.Corrosive Wear Analysis of the Copper Chemical-mechanical Polishing in ULSI Manufacturing[J].Lubrication Engineering,2005(4):77-80. |
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| Authors: | Li Xiujuan Jin Zhuji Kang Renke Guo Dongming Su Jianxiu |
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| Abstract: | Copper chemical-mechanical polishing which is the key planarization process in multi-layer mental interaction of ultra-scale-integrated circuits(ULSI) manufacturing was studied.According to the existed phenomenon of the chemical corrosion of slurry chemistry and the abrasive impact of mechanical abrasive,the material removal mechanism of Cu-CMP was analyzed by the corrosive wear theory.It was pointed that the enhancement of corrosive wear of slurry chemistry by mechanical effects and the augmentation of abrasive wear by corrosion of slurry should exist in the material removal process.The static etching of slurry,the enhancement of corrosive wear of slurry chemistry by mechanical effects and the augmentation of abrasive wear by corrosion of slurry were analyzed. |
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| Keywords: | ULSI Copper CMP material removal mechanism corrosive wear |
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