Synthesis and Photoluminescence of Eu2+-Doped α-Silicon Nitride Nanowires Coated with Thin BN Film |
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| Authors: | Xin Xu Toshiyuki Nishimura Qing Huang Rong-Jun Xie Naoto Hirosaki Hidehiko Tanaka |
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| Affiliation: | Department of Materials Science &Engineering, University of Science and Technology of China, Hefei 230026, China;
Nanoscale Materials Center, National Institute for Materials Science, Tsukuba 305-0044, Japan |
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| Abstract: | A feasible doping strategy is introduced to synthesize Eu2+-doped α-Si3N4 nanowires coated with a thin BN film. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and a fluorescence spectrophotometer. The Eu2+-doped α-Si3N4 nanowires emitted strong yellow light, which is related to the 4 f 65 d –4 f 7 transition of Eu2+, upon a broad excitation wavelength range between 250 and 450 nm. The obtained nanowires provided a potential candidate for application in optical nanodevices, as well as in white LEDs. |
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