Piezoelectric properties of PZT films prepared by the sol-gel method and their application in MEMS |
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Authors: | Sibei Xiong |
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Affiliation: | New Product & Technologies Development Department, Matsushita Electric Works, Ltd., Osaka 571-8686, Japan |
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Abstract: | Pb(Zr0.52Ti0.48)O3 (PZT) piezoelectric thin films with thickness of 0.7-2.2 μm were prepared on Pt/Ti-coated SiO2/Si (0.5 μm/300 μm) substrates by the sol-gel method. The piezoelectric coefficient e31 of the PZT thin film was − 12.5 ± 0.3 C/m2, which is evaluated by measuring the tip displacement of PZT-coated cantilevers of the dimensions 50 mm long, 4 mm wide, and 0.3 mm thick. The prepared PZT films demonstrated excellent piezoelectric properties and have large potential applications in MEMS devices. Micro-machined ultrasonic sensors, in which PZT-coated membrane functioned as sensing element, were fabricated and their properties were also characterized. |
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Keywords: | Piezoelectric materials PZT MEMS |
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