Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE |
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| Authors: | Sin YK Horikawa H Nakajima M Kamijoh T |
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| Affiliation: | Oki Electr. Ind. Co. Ltd., Tokyo, Japan; |
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| Abstract: | The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In/sub 0.49/Ga/sub 0.51/P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p/sup +/-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.<> |
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